FOD819 Description
The FOD819 consists of a gallium arsenide (GaAs) infra− red emitting diode, driving a high speed photo detector with integrated base−to−emitter resistor, RBE, in a 4−pin dual−in−line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
FOD819 Key Features
- High Speed Performance ~ 30 kHz
- Current Transfer Ratio: 100% to 600%
- Minimum BVCEO of 80 V Guaranteed
- Safety and Regulatory Approvals
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage