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FOD819 - 4-Pin DIP High Speed Phototransistor Optocouplers

General Description

The FOD819 consists of a gallium arsenide (GaAs) infra red emitting diode, driving a high speed photo detector with integrated base to emitter resistor, RBE, in a 4 pin dual in

line package.

Key Features

  • High Speed Performance ~ 30 kHz.
  • Current Transfer Ratio: 100% to 600%.
  • Minimum BVCEO of 80 V Guaranteed.
  • Safety and Regulatory Approvals:.
  • UL1577, 5,000 VACRMS for 1 Minute.
  • DIN EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Insulation Voltage Typical.

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Datasheet Details

Part number FOD819
Manufacturer onsemi
File Size 451.25 KB
Description 4-Pin DIP High Speed Phototransistor Optocouplers
Datasheet download datasheet FOD819 Datasheet

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Full PDF Text Transcription for FOD819 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FOD819. For precise diagrams, tables, and layout, please refer to the original PDF.

FOD819 Series FOD819 4-Pin DIP High Speed Phototransistor Optocouplers Description The FOD819 consists of a gallium arsenide (GaAs) infra− red emitting diode, driving a h...

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ts of a gallium arsenide (GaAs) infra− red emitting diode, driving a high speed photo detector with integrated base−to−emitter resistor, RBE, in a 4−pin dual−in−line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.