FOD814A, FOD814 Datasheet - ON Semiconductor

FOD814A - 4-Pin DIP Phototransistor Optocouplers

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4 *pin dual in *line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in.

FOD814A Features

* AC Input Response (FOD814)

* Current Transfer Ratio in Selected Groups

* FOD814: 20

* 300%

* FOD814A: 50

* 150%

* FOD817: 50

* 600%

* FOD817A: 80

* 160%

* FOD817B: 130