FOD814 - 4-Pin DIP Phototransistor Optocouplers
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in.
FOD814 Features
* AC Input Response (FOD814)
* Current Transfer Ratio in Selected Groups:
FOD814: 20
* 300% FOD817: 50
* 600% FOD814A: 50
* 150% FOD817A: 80
* 160%
FOD817B: 130
* 260% FOD817C: 200
* 400% FOD817D: 300
* 600%
* Minimum BVCEO of 70 V Gu