FOD819 Datasheet (ON Semiconductor) - 4-Pin DIP High Speed Phototransistor Optocouplers

FOD819, 4-Pin DIP High Speed Phototransistor Optocouplers

The FOD819 consists of a gallium arsenide (GaAs) infra * red emitting diode, driving a high speed photo detector with integrated base *to *emitter resistor, RBE, in a 4 *pin dual *in *line package.

It is designed to be an improved replacement to the popular

FOD819 Features

* High Speed Performance ~ 30 kHz

* Current Transfer Ratio: 100% to 600%

* Minimum BVCEO of 80 V Guaranteed

* Safety and Regulatory Approvals:

* UL1577, 5,000 VACRMS for 1 Minute

* DIN EN/IEC60747

* 5

* 5, 850 V Peak Working Insulation Volt