FOD819 - 4-Pin DIP High Speed Phototransistor Optocouplers

ON Semiconductor

FOD819 Datasheet Preview — Preview of FOD819 PDF

Datasheet Details

Part number	FOD819
Manufacturer	ON Semiconductor ↗
File Size	451.25 KB
Description	4-Pin DIP High Speed Phototransistor Optocouplers
Datasheet	FOD819-ONSemiconductor.pdf

FOD819 Product details

Description

The FOD819 consists of a gallium arsenide (GaAs) infra red emitting diode, driving a high speed photo detector with integrated base to emitter resistor, RBE, in a 4 pin dual in line package.

Features

High Speed Performance ~ 30 kHz.
Current Transfer Ratio: 100% to 600%.
Minimum BVCEO of 80 V Guaranteed.
Safety and Regulatory Approvals:.
UL1577, 5,000 VACRMS for 1 Minute.
DIN EN/IEC60747.
5.
5, 850 V Peak Working Insulation Voltage Typical.

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Published: Jul 17, 2024 |