FQB10N50CF mosfet equivalent, n-channel mosfet.
* 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A * Low gate charge ( Typ. 45 nC) * Low Crss ( Typ. 17.5 pF) * 100% avalanche tested * Fas.
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