FQB22P10TM-F085 Datasheet | onsemi

Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features - -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V - Low gate charge ( typical 40 n C) - Low Crss ( typical 160 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - 175°C maximum junction temperature rating - Qualified to AEC Q101 - Ro HS pliant G S D2-PAK FQB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) - Power Dissipation (TC =...