| Description | This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variabl... |
| Features |
• −5.7 A, −200 V, RDS(on) = 690 mΩ (Max.) @ VGS = −10 V, ID = −2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continu... |
| Datasheet |
 FQD7P20 Datasheet 231.76KB |
