FQH44N10 Datasheet PDF (N-Channel QFET MOSFET)

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQH44N10 — N-Channel QFET® MOSFET FQH44N10 N-Channel QFET® MOSFET 100 V, 48 A, 39.

48 A, 100 V, RDS(on) = 39 m (Max. ) @ VGS = 10 V, ID = 24 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 85 pF).
100% Avalanche Tested.
175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single P.

Brand Logo	Part Number	Description	Manufacturer
	FQH44N10	MOSFET	Fairchild Semiconductor
	FQH44N10_F133	MOSFET	Fairchild Semiconductor