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FQI5N60C - N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max. ) @VGS = 10 V, ID = 2.1 A.
  • Low Gate Charge (Typ. 15 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested.

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Datasheet Details

Part number FQI5N60C
Manufacturer onsemi
File Size 930.01 KB
Description N-Channel MOSFET
Datasheet download datasheet FQI5N60C Datasheet

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