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  ON Semiconductor Electronic Components Datasheet  

FQI5N60C Datasheet

N-Channel MOSFET

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FQI5N60C
N-Channel QFET® MOSFET
600 V, 4.5 A, 2.5
Features
• 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
GDS
I2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQI5N60CTU
600
4.5
2.6
18
± 30
210
4.5
10
4.5
100
0.8
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQI5N60CTU
1.25
62.5
Unit
°C/W
©2003 SSemiconductor Components Industries, LLC.
October-2017,Rev.3
PPublication Order Number:
FQI5N60C/D


  ON Semiconductor Electronic Components Datasheet  

FQI5N60C Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQI5N60C
Device
FQI5N60CTU
Package
I2-PAK
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600 -- -- V
-- 0.6 -- V/°C
-- -- 1 μA
-- -- 10 μA
-- -- 100 nA
--
--
-100
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 2.25 A
VDS = 40 V, ID = 2.25 A
2.0 -- 4.0 V
-- 2.0 2.5 Ω
-- 4.7 --
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 515 670 pF
-- 55 72 pF
-- 6.5 8.5 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
10 30 ns
42 90 ns
38 85 ns
46 100 ns
15 19 nC
2.5 -- nC
6.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9 mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 4.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 4.5 A
-- -- 18 A
-- -- 1.4 V
-- 300 --
ns
-- 2.2 -- μC
www.onsemi.com
2


Part Number FQI5N60C
Description N-Channel MOSFET
Maker ON Semiconductor
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FQI5N60C Datasheet PDF






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