FQP3N60C - N-Channel MOSFET

ON Semiconductor

FQP3N60C Datasheet Preview — Preview of FQP3N60C PDF

Datasheet Details

Part number	FQP3N60C
Manufacturer	ON Semiconductor ↗
File Size	351.28 KB
Description	N-Channel MOSFET
Datasheet	FQP3N60C-ONSemiconductor.pdf

FQP3N60C Product details

Description

This N Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

3.0 A, 600 V, RDS(on) = 3.4 W (Max. ) at VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 10.5 nC).
Low Crss (Typ. 5.0 pF).
100% Avalanche Tested.
This is a Pb.
Free Device.

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Published: Jun 28, 2022 |