FQP3N60C
FQP3N60C is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A
- Low Gate Charge (Typ. 10.5 n C)
- Low Crss (Typ. 5.0 p F)
- 100% Avalanche Tested
- This is a Pb- Free Device
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±30
Drain Current Continuous (TC = 25°C)
Continuous (TC = 100°C)
Drain Current Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1)
7.5 dv/dt Peak Diode Recovery dv/dt (Note 3)
A m J A m J V/ns
Power
(TC = 25°C)
Dissipation
Derate above 25°C
W/°C
TJ, TSTG Operating and Storage Temperature Range
- 55...
