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FQP3N60C - N-Channel MOSFET

Description

This N

using ON Semiconductor’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanch

Features

  • 3.0 A, 600 V, RDS(on) = 3.4 W (Max. ) at VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 10.5 nC).
  • Low Crss (Typ. 5.0 pF).
  • 100% Avalanche Tested.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FQP3N60C
Manufacturer onsemi
File Size 351.28 KB
Description N-Channel MOSFET
Datasheet download datasheet FQP3N60C Datasheet

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Full PDF Text Transcription

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MOSFET - N-Channel QFET) 600 V, 3.4 W, 3.0 A FQP3N60C General Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5.
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