FQP3N60C Datasheet - ON Semiconductor

N-Channel MOSFET

FQP3N60C Features

* 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A

* Low Gate Charge (Typ. 10.5 nC)

* Low Crss (Typ. 5.0 pF)

* 100% Avalanche Tested

* This is a Pb

* Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Paramete

FQP3N60C General Description

This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch.

FQP3N60C Datasheet (351.28 KB)