FQP3N60C
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A
- Low Gate Charge (Typ. 10.5 nC)
- Low Crss (Typ. 5.0 pF)
- 100% Avalanche Tested
- This is a Pb-Free Device
