Datasheet4U Logo Datasheet4U.com

FW216A - N-Channel Power MOSFET

Features

  • ON-resistance Nch : RDS(on)1=49mΩ (typ. ).
  • 4.0V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW.

📥 Download Datasheet

Datasheet Details

Part number FW216A
Manufacturer onsemi
File Size 195.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FW216A Datasheet

📁 Similar Datasheet

  • FW211 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FW211 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FW213 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FW213 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FW214 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FW214 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FW215 - DC-DC Converter Applications (Sanyo Semiconductor)
  • FW21555 - PCI-to-PCI Bridge (Intel)
  • FW20020-24 - 2.0P HEADER 24P 6.2H STRAIGHT (FooSungtech)
  • FW20020-24S - 2.0P HEADER 24P 6.2H STRAIGHT (FooSungtech)
Other Datasheets by ON Semiconductor
  • FW217A - N-Channel Power MOSFET
  • FW276 - N-Channel Power MOSFET
  • FW297 - Power MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA0176C FW216A N-Channel Power MOSFET 35V, 4.5A, 64mΩ, Dual SOIC8 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=49mΩ (typ.) • 4.0V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 4.5 18 1.6 2.2 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
Published: |