HGTG18N120BN Key Features
- 26 A, 1200 V, TC = 110°C
- Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
- Typical Fall Time
- 140 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- This Device is Pb-Free
- Rev. 3
- Part: HGTG18N120BN
- Description: NPN IGBT
- Manufacturer: onsemi
- Size: 406.46 KB
Other HGTG18N120BN Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
HGTG18N120BN | N-Channel IGBT |
Intersil |
HGTG18N120BN | N-Channel IGBT |
|
Fairchild Semiconductor |
HGTG18N120BND | N-Channel IGBT |
|
Intersil |
HGTG18N120BND | N-Channel IGBT |