HGTG18N120BN Datasheet and Specifications PDF

HGTG18N120BN Data Sheet January 2000 File Number 4518.3 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high vol.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: .

HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGB.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: .

HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essenti.

* 26 A, 1200 V, TC = 110°C
* Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
* Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
* Short Circuit Rating
* Low Conduction Loss
* This Device is Pb
*Free C G E E C G TO
*247
*3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N1.