HGTG18N120BN Description
HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
HGTG18N120BN Key Features
- 26 A, 1200 V, TC = 110°C
- Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
- Typical Fall Time
- 140 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- This Device is Pb-Free
- Rev. 3