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HGTG18N120BND Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - NPT 1200 V HGTG18N120BND.

General Description

HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Key Features

  • 26 A, 1200 V, TC = 110°C.
  • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A.
  • Typical Fall Time.
  • . . . 140 ns at TJ = 150°C.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • This Device is Pb.
  • Free www. onsemi. com C G E E C G TO.
  • 247.
  • 3LD CASE 340CK.

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