HGTG18N120BND Datasheet N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: HGTG18N120BND Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.

Datasheet Details

Part number	HGTG18N120BND
Manufacturer	Fairchild (now onsemi)
File Size	121.79 KB
Description	N-Channel IGBT
Datasheet	HGTG18N120BND_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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