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HGTG18N120BND - IGBT

General Description

HGTG18N120BND is based on Non

designs.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Key Features

  • 26 A, 1200 V, TC = 110°C.
  • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A.
  • Typical Fall Time.
  • . . . 140 ns at TJ = 150°C.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • This Device is Pb.
  • Free www. onsemi. com C G E E C G TO.
  • 247.
  • 3LD CASE 340CK.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 18N120BND © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev.