Datasheet Summary
IGBT
- NPT
1200 V
Description HGTG18N120BND is based on Non- Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features
- 26 A, 1200 V, TC = 110°C
- Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
- Typical Fall Time
- - . . . 140 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- This Device is Pb- Free
.onsemi. C
TO- 247- 3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K 18N120BND
© Semiconductor ponents Industries, LLC, 2001
February, 2020
- Rev....
