• Part: HGTG18N120BND
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 426.40 KB
HGTG18N120BND Datasheet (PDF) Download
onsemi
HGTG18N120BND

Description

Ratings Unit BVCES Collector to Emitter Voltage 1200 V IC Collector Current Continuous TC = 25°C 54 A TC = 110°C 26 A ICM Collector Current Pulsed (Note 1) TC = 25°C 160 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C (.

Key Features

  • 26 A, 1200 V, TC = 110°C
  • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
  • Short Circuit Rating
  • Low Conduction Loss
  • This Device is Pb-Free C G E E C G