Datasheet Summary
HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET
Dual N-Channel Logic Level UltraFET® Power MOSFET
60 V, 3.5 A, 105 mΩ
Features
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process
- Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V
- Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is
- Peak Current vs Pulse Width Curve capable of withstanding high energy
- UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse...