MBD110DWT1G Description
Dual Schottky Barrier Diodes MBD110DWT1G, MBD330DWT1G Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−363 is ideal for low−power surface mount applications where board...
MBD110DWT1G Key Features
- Extremely Low Minority Carrier Lifetime
- Very Low Capacitance
- Low Reverse Leakage
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to +125 C
- 55 to +150 C
- Rev. 9
- MBD330DWT1G
- Forward Voltage (IF = 10 mA) (IF = 1.0 mA) (IF = 10 mA)