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  ON Semiconductor Electronic Components Datasheet  

MBR20100CTG Datasheet

Switch-mode Power Rectifiers

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MBR2080CTG,
MBR2090CTG,
MBR20100CTG
Switch-mode
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
2, 4
3
4
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
B20x0G
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 8, 9 or 10
G = Pb−Free Device
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20100CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR20100CTG Datasheet

Switch-mode Power Rectifiers

No Preview Available !

MBR2080CTG, MBR2090CTG, MBR20100CTG
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating
Symbol 2080CT 2090CT 20100CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 133°C
VRRM
VRWM
VR
IF(AV)
80
90 100 V
10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFRM
IFSM
20
150
A
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
°C
Storage Temperature
Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
Value
2.0
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF V
0.75
0.85
0.85
0.95
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR mA
6.0
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device
MBR2080CTG
MBR2090CTG
MBR20100CTG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
www.onsemi.com
2


Part Number MBR20100CTG
Description Switch-mode Power Rectifiers
Maker ON Semiconductor
Total Page 4 Pages
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