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MBR20200CTG Datasheet

Dual Schottky Rectifier

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MBR20200CT
Switch‐mode
Power Rectifier
Dual Schottky Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
This is a Pb-Free Device*
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for
10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 VOLTS
1
2, 4
3
4
1
2
3
TO−220
CASE 221A
PLASTIC
STYLE 6
MARKING DIAGRAM
AYWW
MBR20200CTG
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 10
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR20200CTG
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MBR20200CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR20200CTG Datasheet

Dual Schottky Rectifier

No Preview Available !

MBR20200CT
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
200
V
VRWM
VR
Average Rectified Forward Current (TC = 161°C)
Per Leg IF(AV)
10
A
Per Package
20
Peak Repetitive Forward Current per Leg
(Square Wave, 20 kHz, TC = 158°C)
IFRM
20
A
Non-Repetitive Peak Surge Current
IFSM
150
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction-to-Case
Maximum Thermal Resistance, Junction-to-Ambient
Condition
Minimum Pad
Minimum Pad
Symbol
RqJC
RqJA
Value
2.0
60.0
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol Min
Typical Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 10 A, TJ = 25°C)
(IF = 10 A, TJ = 125°C)
(IF = 20 A, TJ = 25°C)
(IF = 20 A, TJ = 125°C)
VF
V
0.80
0.90
0.66
0.80
0.89
1.00
0.76
0.90
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
mA
0.0002
1.0
0.4
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DYNAMIC CHARACTERISTICS (Per Leg)
Characteristic
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Value
Unit
CT
500
pF
http://onsemi.com
2


Part Number MBR20200CTG
Description Dual Schottky Rectifier
Maker ON Semiconductor
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MBR20200CTG Datasheet PDF






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