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MBRAF2H100G Datasheet Surface Mount Schottky Power Rectifier

Manufacturer: onsemi

Overview: MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount.

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