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  ON Semiconductor Electronic Components Datasheet  

MBRB20100CT Datasheet

Power Rectifier

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MBRB20100CT
Preferred Device
SWITCHMODEt
Power Rectifier
D2PAK Surface Mount Power Package
The D2PAK Power Rectifier is a state−of−the−art device that
employs the use of the Schottky Barrier principle with a platinum
barrier metal.
Features
Package Designed for Power Surface Mount Applications
Center−Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
Similar in Size to Industry Standard TO−220 Package
Pb−Free Packages are Available
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C >400 V
Human Body Model, 3B >8000 V
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 110°C) Total Device
Peak Repetitive Forward Current (Rated
VR, Square Wave, 20 kHz, TC = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
10
20
20
150
V
A
A
A
Peak Repetitive Reverse Surge Current
IRRM
0.5
A
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Tstg −65 to +175 °C
Operating Junction Temperature (Note 1)
TJ −65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000 V/ms
Maximum ratings are those values beyond which device damage can occur .
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 6
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
100 VOLTS
1
4
3
1
3
4 D2PAK
CASE 418B
STYLE 3
MARKING DIAGRAM
AY WW
B20100G
AKA
A
Y
WW
B20100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRB20100CT/D
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  ON Semiconductor Electronic Components Datasheet  

MBRB20100CT Datasheet

Power Rectifier

No Preview Available !

MBRB20100CT
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 10 Amp, TC = 125°C)
(iF = 10 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
2. When mounted using minimum recommended pad size on FR−4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
RqJC
RqJA
vF
iR
Value
2.0
50
0.75
0.85
0.85
0.95
6.0
0.1
Unit
°C/W
V
mA
ORDERING INFORMATION
Device
Package
Shipping
MBRB20100CT
D2PAK
50 Units / Rail
MBRB20100CTG
D2PAK
(Pb−Free)
50 Units / Rail
MBRB20100CTT4
D2PAK
800 Units / Tape & Reel
MBRB20100CTT4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging
Specifications Brochure, BRD8011/D.
50
125°C
20
150°C
TJ = 150°C
10
TJ = 125°C
10
100°C
TJ = 100°C
51
3 TJ = 25°C
0.1
1
0.5 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0
TJ = 25°C
20 40
60
80 100 120
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current Per Diode
32
RATED VOLTAGE
28 APPLIED
24
RqJC = 2°C/W
20
16
DC
12 SQUARE
WAVE
8
4
0
80 90 100 110 120 130 140 150 160
TC, CASE TEMPERATURE (°C)
Figure 3. Typical Current Derating, Case, Per Leg
20
18 TJ = 125°C
16
14 IPK/IAV = 10
IPK/IAV = 5
PI
12
10 IPK/IAV = 20
8
6
4
SQUARE
WAVE
DC
2
0
02
46
8 10 12 14 16 18 20
AVERAGE CURRENT (AMPS)
Figure 4. Average Power Dissipation & Average Current
http://onsemi.com
2


Part Number MBRB20100CT
Description Power Rectifier
Maker ON Semiconductor
Total Page 4 Pages
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