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MBRF20200CT
Preferred Device
SWITCHMODEt Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.125 in • Electrically Isolated. No Isolation Hardware Required.
MBRF20200CT Datasheet
