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MJ21195G - Silicon Power Transistors

Features

  • Total Harmonic Distortion Characterized.
  • High DC Current Gain.
  • Excellent Gain Linearity.
  • High SOA.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – MJ21195G

Datasheet Details

Part number MJ21195G
Manufacturer ON Semiconductor
File Size 228.76 KB
Description Silicon Power Transistors
Datasheet download datasheet MJ21195G Datasheet
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Full PDF Text Transcription

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Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Symbol VCEO VCBO VEBO VCEX IC ICM IB PD Value 250 400 5 400 16 30 5 250 1.
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