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  ON Semiconductor Electronic Components Datasheet  

MJ21195G Datasheet

Silicon Power Transistors

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MJ21195G - PNP
MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5V
Collector Current Continuous
Collector Current Peak (Note 1)
Base Current Continuous
Total Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250 W
1.43 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, JunctiontoCase
Symbol
RqJC
Max Unit
0.7 _C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
PNP
CASE 3
NPN
CASE 3
1
BASE
EMITTER 2
1
BASE
EMITTER 2
3
12
TO204AA (TO3)
CASE 107
STYLE 1
MARKING DIAGRAM
MJ2119xG
AYWW
MEX
MJ2119x = Device Code
x = 5 or 6
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ21195G
TO204
(PbFree)
100 Units / Tray
MJ21196G
TO204
(PbFree)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 6
1
Publication Order Number:
MJ21195/D


  ON Semiconductor Electronic Components Datasheet  

MJ21195G Datasheet

Silicon Power Transistors

No Preview Available !

MJ21195G PNP MJ21196G NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
VCEO(sus)
ICEO
IEBO
ICEX
IS/b
hFE
VBE(on)
VCE(sat)
THD
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%
fT
Cob
Min Typical Max
250
− − 100
− − 100
− − 100
5
2.5
75
25
8
− − 2.2
− − 1.4
−−4
0.8
0.08
4−−
− − 500
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
PNP MJ21195G
6.5
6.0 VCE = 10 V
5.5
5.0 5 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0 TJ = 25°C
0.5 ftest = 1 MHz
0
0.1 1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
NPN MJ21196G
7.5
7.0
6.5
6.0
5.5
5.0 10 V
4.5
4.0 VCE = 5 V
3.5
3.0
2.5
2.0 TJ = 25°C
1.5 ftest = 1 MHz
1.0
0.1 1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. Typical Current Gain Bandwidth Product
http://onsemi.com
2


Part Number MJ21195G
Description Silicon Power Transistors
Maker ON Semiconductor
Total Page 6 Pages
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