MJ21195G
MJ21195G is Silicon Power Transistors manufactured by onsemi.
Silicon Power Transistors
- PNP MJ21196G
- NPN
The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
- Total Harmonic Distortion Characterized
- High DC Current Gain
- Excellent Gain Linearity
- High SOA
- These Devices are Pb- Free and are Ro HS pliant-
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector- Emitter Voltage
- 1.5V Collector Current
- Continuous Collector Current
- Peak (Note 1) Base Current
- Continuous Total Device Dissipation @ TC = 25_C
Derate above 25_C
Symbol VCEO VCBO VEBO VCEX IC ICM IB PD
Value 250 400
5 400 16 30
5 250 1.43
Unit Vdc Vdc Vdc Vdc Adc Adc Adc W W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction- to- Case
Symbol Rq...
