MJE13009G Key Features
- VCEO(sus) 400 V and 300 V
- Reverse Bias SOA with Inductive Loads @ TC = 100_C
- Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A
- 700 V Blocking Capability
- SOA and Switching
- Part: MJE13009G
- Manufacturer: onsemi (official site)
- Size: 270.04 KB
Other MJE13009G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJE13009 | 12 AMPERE NPN SILICON POWER TRANSISTOR |
STMicroelectronics |
MJE13009 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
Unisonic Technologies |
MJE13009 | SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS |
TGS |
MJE13009 | NPN Silicon Power Transistors |
Inchange Semiconductor |
MJE13009 | Silicon NPN Power Transistors |
MJE13009G Description
MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.