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MJE2955TG - Complementary Silicon Plastic Power Transistors

Download the MJE2955TG datasheet PDF. This datasheet also covers the MJE2955T variant, as both devices belong to the same complementary silicon plastic power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Current Gain.
  • Bandwidth Product.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE2955T_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE2955TG
Manufacturer onsemi
File Size 58.12 KB
Description Complementary Silicon Plastic Power Transistors
Datasheet download datasheet MJE2955TG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO 60 VCB 70 VEB 5.0 IC 10 IB 6.0 PD (Note 1) 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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