MJE700G - Plastic Darlington Complementary Silicon Power Transistors

onsemi

Key Features

High DC Current Gain.
hFE = 2000 (Typ) @ IC = 2.0 Adc.
Monolithic Construction with Built.
in Base.
Emitter Resistors to Limit Leakage.
Multiplication.
Choice of Packages.
MJE700 and MJE800 Series.
These Devices are Pb.
Free and are RoHS Compliant.

MJE700G plastic darlington complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJE700G
Manufacturer	onsemi
File Size	125.95 KB
Description	Plastic Darlington Complementary Silicon Power Transistors
Datasheet	MJE700G Datasheet

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MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.