Download MJE700 Datasheet PDF
Inchange Semiconductor
MJE700
DESCRIPTION - DC Current Gain- : h FE = 2000(TYP) @ IC= -2A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -4 Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.1 ℃ Tstg Storage Temperature Range -55~150 ℃...