| Part number | MJE702T |
|---|---|
| Datasheet | MJE702T-INCHANGE.pdf |
| File Size | 210.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector Emitter Breakdown Voltage : V(BR)CEO = -80 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE702T | POWER TRANSISTOR | Central Semiconductor |
 |
MJE702 | PNP Epitaxial Silicon Darlington Transistor | Fairchild |
 |
MJE702 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS | Motorola |
 |
MJE702 | DARLINGTON POWER TRANSISTORS | ON |
|
MJE702 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS | Central Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJE702 | PNP Transistor |
| MJE700 | PNP Transistor |
| MJE700T | PNP Transistor |
| MJE701 | PNP Transistor |
| MJE701T | PNP Transistor |
| MJE703 | PNP Transistor |
| MJE703T | PNP Transistor |
| MJE1100 | NPN Transistor |
| MJE13005D | TO-252 NPN Transistor |
| MJE13009F | NPN Transistor |
