Download MJE701T Datasheet PDF
Inchange Semiconductor
MJE701T
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = -60 V - DC Current Gain- : h FE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A - plement to Type MJE801T - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -4 Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.1 ℃ Tstg...