| Part number | MJE702 |
|---|---|
| Datasheet | MJE702-INCHANGE.pdf |
| File Size | 207.28 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJE702 | PNP Epitaxial Silicon Darlington Transistor | Fairchild |
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MJE702 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS | Motorola |
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MJE702 | DARLINGTON POWER TRANSISTORS | ON |
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MJE702 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS | Central Semiconductor |
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MJE702G | Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJE702T | PNP Transistor |
| MJE700 | PNP Transistor |
| MJE700T | PNP Transistor |
| MJE701 | PNP Transistor |
| MJE701T | PNP Transistor |
| MJE703 | PNP Transistor |
| MJE703T | PNP Transistor |
| MJE1100 | NPN Transistor |
| MJE13005D | TO-252 NPN Transistor |
| MJE13009F | NPN Transistor |
