MJE700 - PNP Epitaxial Silicon Darlington Transistor

Fairchild

Datasheet Details

Part number	MJE700
Manufacturer	Fairchild
File Size	51.67 KB
Description	PNP Epitaxial Silicon Darlington Transistor
Datasheet	MJE700 Datasheet
Additional preview pages of the MJE700 datasheet.

📁 Similar Datasheet

MJE700 - PNP Transistor (INCHANGE)
MJE700 - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MJE700 - DARLINGTON POWER TRANSISTORS (ON)
MJE700 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (Central Semiconductor)
MJE700G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
MJE700T - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MJE700T - POWER TRANSISTOR (Central Semiconductor)
MJE700T - PNP Transistor (INCHANGE)
MJE701 - PNP Transistor (INCHANGE)
MJE701 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (Central Semiconductor)

Other Datasheets by Fairchild

MJE701 - PNP Epitaxial Silicon Darlington Transistor
MJE702 - PNP Epitaxial Silicon Darlington Transistor
MJE703 - PNP Transistor
MJE13006 - NPN Silicon Transistor
MJE13007 - NPN Silicon Transistor
MJE13009F - NPN Silicon Transistor
MJE170 - PNP Epitaxial Silicon Transistor
MJE171 - PNP Epitaxial Silicon Transistor

Full PDF Text Transcription

Click to expand full text

MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.

Published: May 7, 2005 |