MJE702 - PNP Epitaxial Silicon Darlington Transistor

Fairchild (now onsemi)

Datasheet Details

Part number	MJE702
Manufacturer	Fairchild (now onsemi)
File Size	51.67 KB
Description	PNP Epitaxial Silicon Darlington Transistor
Datasheet	MJE702 Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number	Description
MJE700	PNP Epitaxial Silicon Darlington Transistor
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MJE13007	NPN Silicon Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.