MJE701
MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in Base Emitter Resistors
- High DC Current Gain : h FE= 750 (Min.) @ IC= -1.5 and -2.0A DC
- plement to MJE800/801/802/803
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value
- 60
- 80
- 60
- 80 -5 -4
- 0.1 40 150
- 55 ~ 150 Unit s V V V V V A A W °C °C
R1 R2 E Equivalent Circuit C
Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Condition...
