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MLP1N06CL - MOSFET

Features

  • f 150°C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. ON Semiconductor.

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www.DataSheet4U.com MLP1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to–source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV.
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