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MMBD301M3T5G - Silicon Hot-Carrier Diode

Key Features

  • Extremely Low Minority Carrier Lifetime.
  • 15 ps (Typ).
  • Very Low Capacitance.
  • 1.5 pF (Max) @ VR = 15 V.
  • Reduces Board Space.
  • These Devices are Pb.
  • Free and Halogen Free/BFR Free http://onsemi. com 30 VOLTS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMBD301M3T5G Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed primarily for high−efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) • Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V • Reduces Board Space • These Devices are Pb−Free and Halogen Free/BFR Free http://onsemi.