MMBD301LT1G Description
Silicon Hot-Carrier Diodes Schottky Barrier Diodes MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/mercial requirements.
MMBD301LT1G Key Features
- Extremely Low Minority Carrier Lifetime
- 15 ps (Typ)
- Very Low Capacitance
- 1.5 pF (Max) @ VR = 15 V
- Low Reverse Leakage
- IR = 13 nAdc (Typ) MBD301, MMBD301
- S Prefix for Automotive and Other