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MMBD301 - Schottky Barrier Diode

Key Features

  • +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute M axim um R atings T a = 25 Param eter W orking Inverse Voltage Forward P ower D issipation @ TA = 25 Derate above 25 Storage tem perature range O perating Junction Tem perature Sym bol W IV pF TSTG TJ V a lu e 25 200 2.0 -55 to +150 -55 to +125 U n it V mW mW/ 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical C haracteristics T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Schottky Barrier Diode MMBD301 Diodes Features +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute M axim um R atings T a = 25 Param eter W orking Inverse Voltage Forward P ower D issipation @ TA = 25 Derate above 25 Storage tem perature range O perating Junction Tem perature Sym bol W IV pF TSTG TJ V a lu e 25 200 2.0 -55 to +150 -55 to +125 U n it V mW mW/ 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical C haracteristics T a = 25 Param eter B reakdown V oltage Reverse Leakage Sym bol BV IR Forward V oltage VF C apacitance CT C onditions IR= 10 A VR = 25 V IF= 1.0 m A IF= 10 m A VR= 15 V, f = 1.0 M Hz M in M ax U nit 30 V 200 nA 450 mV 600 1.