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  ON Semiconductor Electronic Components Datasheet  

MMBD7000LT3G Datasheet

Dual Switching Diode

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MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
Dual Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 100 Vdc
Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to
Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
°C/W
417
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 11
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MARKING DIAGRAM
M5C MG
G
1
M5C
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBD7000LT1G
SMMBD7000LT1G
MMBD7000LT3G
SMMBD7000LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1
Publication Order Number:
MMBD7000LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBD7000LT3G Datasheet

Dual Switching Diode

No Preview Available !

MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
Vdc
100 −
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
mAdc
IR − 1.0
IR2 − 3.0
IR3 − 100
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF Vdc
0.55 0.7
0.67 0.82
0.75 1.1
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr ns
− 4.0
Capacitance (VR = 0 V)
C − 1.5 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Part Number MMBD7000LT3G
Description Dual Switching Diode
Maker ON Semiconductor
Total Page 4 Pages
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