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  ON Semiconductor Electronic Components Datasheet  

MMBF0201NLT1G Datasheet

Power MOSFET

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MMBF0201NLT1G pdf
MMBF0201NL,
MVMBF0201NL
Power MOSFET
300 mAmps, 20 Volts
NChannel SOT23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dcdc converters, power management in portable and
batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
MVMBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RqJA
TL
20
± 20
300
240
750
225
55 to 150
556
260
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
300 mAMPS 20 VOLTS
RDS(on) = 1 W
NChannel
3
1
2
MARKING DIAGRAM
AND PIN ASSIGNMENT
33
Drain
1
2
SOT23
CASE 318
STYLE 21
N1 M G
G
12
Gate Source
N1 = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBF0201NLT1G
Package
SOT23
(PbFree)
Shipping
3000 / Tape &
Reel
MVMBF0201NLT1G* SOT23 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 5
1
Publication Order Number:
MMBF0201NLT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBF0201NLT1G Datasheet

Power MOSFET

No Preview Available !

MMBF0201NLT1G pdf
MMBF0201NL, MVMBF0201NL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min Typ Max
Unit
20
Vdc
mAdc
− − 1.0
− − 10
±100
nAdc
1.0 1.7 2.4
Vdc
0.75 1.0
1.0 1.4
W
450 mMhos
45
25
5.0
pF
2.5
2.5
15
0.8
1400
ns
pC
− − 0.3
− − 0.75
0.85
A
V
http://onsemi.com
2


Part Number MMBF0201NLT1G
Description Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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