MOCD223M Datasheet | onsemi

Description The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual- channel version of the MOC223M. They are ideally suited for high density applications, and eliminates the need for through the board mounting. Features - High Current Transfer Ratio of 500% Minimum at IF = 1 m A - Minimum BVCEO of 30 V Guaranteed - Convenient Plastic SOIC- 8 Surface Mountable Package Style, with 0.050″ Lead Spacing - Safety and Regulatory Approvals: - UL2688, 2,500 VACRMS for 1 Minute - DIN- EN/IEC60747- 5- 5, 565 V Peak Working Insulation Voltage - These Devices are Pb- Free and Halogen Free Applications - Low Power Logic Circuits - Interfacing and Coupling Systems of Different Potentials and Impedances - Telemunications Equipment - Portable Electronics - Solid State Relays SOIC8 CASE 751DZ MARKING DIAGRAMS $Y 223 VXYYS $Y D223 VXYYS 1 (MOC223M) 1 (MOCD223M) $Y 223/D223 V X YY S = onsemi Logo = Specific Device Code = DIN EN/IEC60747- 5- 5 Option = One- Digit Year Code = Digit Work Week = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor ponents Industries, LLC, 2006 December, 2023 - Rev. 7 Publication Order Number: MOCD223M/D MOC223M, MOCD223M SCHEMATICS Anode 1 1 Cathode 2 N/C...