MOCD223M Description
The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual−channel version of the MOC223M. They are ideally suited for high density applications, and eliminates the need for through the board mounting.
MOCD223M Key Features
- High Current Transfer Ratio of 500% Minimum at IF = 1 mA
- Minimum BVCEO of 30 V Guaranteed
- Safety and Regulatory Approvals
- UL2688, 2,500 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
- These Devices are Pb-Free and Halogen Free