MTB15N06V
MTB15N06V is Power Field Effect Transistor manufactured by onsemi.
Features of TMOS V
- On- resistance Area Product about One- half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E- FET Predecessors
Features mon to TMOS V and TMOS E- FETs
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E- FET
- Surface Mount Package Available in 16 mm 13- inch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number http://onsemi.
TMOS POWER FET 15 AMPERES, 60 VOLTS
RDS(on) = 0.12 W
D2PAK CASE 418B- 02,
Style 2
© Semiconductor ponents Industries, LLC, 2006
August, 2006
- Rev. 3
Publication Order Number: MTB15N06V/D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage
- Continuous Gate- Source Voltage
- Non- Repetitive (tp ≤ 10 ms)
VDSS VDGR VGS VGSM
60 Vdc 60 Vdc ± 20 Vdc ± 25 Vpk
Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C
Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ =...
