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MTB15N06V - Power Field Effect Transistor

MTB15N06V Description

MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon Gate.

MTB15N06V Features

* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETs
* Avalanche Energy Specified

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Power Field Effect Transistor ON Semiconductor
ON Semiconductor MTB15N06V-like datasheet