| Part Number | MTB15N06V |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB15N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–r.
of TMOS V * On *resistance Area Product about One *half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology * Faster Switching than E *FET Predecessors ™ Data Sheet V™ MTB15N06V TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM N *Channel Enhancement *Mode Silicon Gate TM D G . |
MTB15N06V Datasheet
The MTB15N06V is a TMOS POWER FET.
| Part Number | MTB15N06V |
|---|---|
| Description | Power Field Effect Transistor |
| Manufacturer | onsemi |
| Overview |
MTB15N06V
Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
TMOS V is a new technology designed to achieve an on−resistance a.
of TMOS V
* On *resistance Area Product about One *half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology * Faster Switching than E *FET Predecessors Features Common to TMOS V and TMOS E *FETs * Avalanche Energy Specified * IDSS and VDS(on) Specified at Elevated Temperature * Static . |