900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MTB2N60E Datasheet

High Energy Power FET

No Preview Available !

MTB2N60E
Designer’sData Sheet
TMOS E−FET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
http://onsemi.com
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
2.0 AMPERES, 600 VOLTS
RDS(on) = 3.8 W
CASE 418B02, Style 2
D2PAK
D
®G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS 600 Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR 600 Vdc
GatetoSource Voltage — Continuous
— NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 μs)
ID 2.0 Adc
ID 1.3
IDM 7.0 Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD 50 Watts
0.4 W/°C
2.5 Watts
Operating and Storage Temperature Range
TJ, Tstg 55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 2.0 Apk, L = 95 mH, RG = 25 Ω)
EAS 190 mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient (1)
RθJC
RθJA
RθJA
2.5 °C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB2N60E/D


  ON Semiconductor Electronic Components Datasheet  

MTB2N60E Datasheet

High Energy Power FET

No Preview Available !

MTB2N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
— 480
Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 480 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
μAdc
— — 0.25
— — 1.0
— — 100 nAdc
2.0 3.1 4.0 Vdc
— 8.5 — mV/°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 50 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 300 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 18 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
— 3.0 3.8 Ohm
Vdc
— — 8.2
— — 8.4
1.0 —
— mhos
— 435 —
— 100 —
— 20 —
pF
— 12 — ns
— 21 —
— 30 —
— 24 —
— 13 — nC
— 2.0 —
— 6.0 —
— 5.0 —
— 1.0 1.6 Vdc
— 0.9 —
— 340 —
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
LD nH
— 3.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
nH
— 7.5 —
http://onsemi.com
2


Part Number MTB2N60E
Description High Energy Power FET
Maker ON Semiconductor
PDF Download

MTB2N60E Datasheet PDF






Similar Datasheet

1 MTB2N60E TMOS POWER FET
Motorola
2 MTB2N60E High Energy Power FET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy