Datasheet Details
- Part number
- MTB2N60E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 260.49 KB
- Datasheet
- MTB2N60E-ONSemiconductor.pdf
- Description
- High Energy Power FET
MTB2N60E Description
MTB2N60E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon.MTB2N60E Features
* Ts may be safely operated into an inductive load; however, snubbing reduces switching losses. td(off) = RG Ciss In (VGG/VGSP) C, CAPACITANCE (pF) C, CAPACITANCE (pF) 800 VDS = 0 V VGS = 0 V 700 Ciss 600 TJ = 25°C 500 400 Crss Ciss 300 200 Coss 100 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATEMTB2N60E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
📁 Related Datasheet
📌 All Tags