MTB2N60E - High Energy Power FET

Datasheet Summary

Features

Ts may be safely operated into an inductive load; however, snubbing reduces switching losses. td(off) = RG Ciss In (VGG/VGSP) C,.

ON Semiconductor

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Datasheet Details

Part number	MTB2N60E
Manufacturer	ON Semiconductor
File Size	260.49 KB
Description	High Energy Power FET
Datasheet	MTB2N60E Datasheet
Additional preview pages of the MTB2N60E datasheet.

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Full PDF Text Transcription

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MTB2N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.

Published: Feb 9, 2016 |