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MTB2N60E - High Energy Power FET

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ON Semiconductor

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MTB2N60E High Energy Power FET by ON Semiconductor - Datasheet Preview — Datasheet preview – MTB2N60E

Datasheet Details

Part number	MTB2N60E
Manufacturer	ON Semiconductor
File Size	260.49 KB
Description	High Energy Power FET
Datasheet	MTB2N60E Datasheet
Additional preview pages of the MTB2N60E datasheet.

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Features

Ts may be safely operated into an inductive load; however, snubbing reduces switching losses. td(off) = RG Ciss In (VGG/VGSP) C,.

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Published: Feb 9, 2016 |