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  ON Semiconductor Electronic Components Datasheet  

MTB6N60E1 Datasheet

High Energy Power FET

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MTB6N60E1
TMOS E−FET.
High Energy Power FET
D2PAK−SL Straight Lead
NChannel EnhancementMode Silicon
Gate
http://onsemi.com
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
D2PAKSL
CASE 418C01
Style 2
D
®G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage — Continuous
GateSource Voltage — NonRepetitive (tp 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
600
600
± 20
± 40
6.0
4.6
18
125
1.0
2.5
55 to 150
405
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MTB6N60E1/D


  ON Semiconductor Electronic Components Datasheet  

MTB6N60E1 Datasheet

High Energy Power FET

No Preview Available !

MTB6N60E1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
T(VeGmSpe=r0atVurdec,CIoDe=ffi2ci5e0ntμ(APdocs)itive)
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
DraintoSource OnVoltage
((VVGGSS
=
=
10
10
Vdc,
Vdc,
IIDD
=
=
6.0
3.0
Adc)
Adc,
TJ
=
125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
600 —
— 689
— Vdc
— mV/°C
μAdc
— — 1.0
— — 50
— — 100 nAdc
2.0 3.0 4.0 Vdc
— 7.1 — mV/°C
— 0.94 1.2 Ohms
Vdc
— 6.0 8.6
— — 7.6
2.0 5.5
— mhos
1498
2100
pF
— 158 217
— 29 56
— 14 30
— 19 40
— 40 80
— 26 50
— 35.5 50
— 8.1 —
— 14.1 —
— 15.8 —
ns
nC
Vdc
— 0.83 1.5
— 0.72 —
— 266 —
ns
— 166 —
— 100 —
— 2.5 — μC
nH
— 4.5 —
— nH
— 7.5
http://onsemi.com
2


Part Number MTB6N60E1
Description High Energy Power FET
Maker ON Semiconductor
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