MTB6N60E1
Description
MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commu...
- Part: MTB6N60E1
- Description: High Energy Power FET
- Manufacturer: onsemi
- Size: 204.86 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| MTB6N60E1 | Motorola Semiconductor | TMOS POWER FET |
| MTB6N60E | Motorola Semiconductor | TMOS POWER FET |