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MTB6N60E1 Datasheet High Energy Power FET

Manufacturer: onsemi

Overview: MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.

Key Features

  • duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C,.