900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MTB9N25E Datasheet

High Energy Power FET

No Preview Available !

MTB9N25E
Designer’sData Sheet
TMOS E−FET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
D2PAK
CASE 418B02
Style 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB9N25E/D


  ON Semiconductor Electronic Components Datasheet  

MTB9N25E Datasheet

High Energy Power FET

No Preview Available !

MTB9N25E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS 250 Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR 250 Vdc
GatetoSource Voltage — Continuous
— NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 μs)
ID 9.0 Adc
ID 5.7
IDM 32 Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD 80 Watts
0.64 W/°C
2.5 Watts
Operating and Storage Temperature Range
TJ, Tstg 55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 Ω)
EAS mJ
122
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient (1)
RθJC
RθJA
RθJA
1.56 °C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
TL 260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
http://onsemi.com
2


Part Number MTB9N25E
Description High Energy Power FET
Maker ON Semiconductor
PDF Download

MTB9N25E Datasheet PDF






Similar Datasheet

1 MTB9N25E TMOS POWER FET
Motorola
2 MTB9N25E High Energy Power FET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy