MTD20N06HDL
MTD20N06HDL is Power MOSFET manufactured by onsemi.
Features
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete
Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb- Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MW)
VDSS
VDGR
Gate- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10 ms)
Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms)
VGS VGSM
ID ID IDM
± 15 ± 20
20 12 60
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 1)
Operating and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit Vdc Vdc
Vdc Vpk Adc
Apk
W W/°C
W °C
Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 20 Apk, L = 1.0 m H, RG = 25...
