MTP2955VG Datasheet (Power MOSFET)

Part: MTP2955VG
Manufacturer: onsemi (official site)
Size: 200.92 KB

MTP2955VG Key Features

Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb-Free Package is Available
Continuous
Non-Repetitive (tp ≤ 10 ms)
Continuous Drain Current
Continuous @ 100°C Drain Current
Single Pulse (tp ≤ 10 ms)
Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25W) Thermal Resistance
Junction-to-Case

Other MTP2955VG Datasheets

Manufacturer	Part Number	Description
Fairchild	MTP2955V	P-Channel MOSFET
Motorola Semiconductor	MTP2955V	TMOS POWER FET
Motorola Semiconductor	MTP2955	POWER FET
Motorola Semiconductor	MTP2955E	TMOS POWER FET

MTP2955VG Description

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer...