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  ON Semiconductor Electronic Components Datasheet  

MTP2955VG Datasheet

Power MOSFET

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MTP2955V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
PChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Package is Available*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage
Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 15 Vdc
± 25 Vpk
12 Adc
8.0
42 Apk
60 W
0.40 W/°C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25W)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TJ, Tstg
EAS
55 to 175
216
°C
mJ
RqJC
RqJA
TL
°C/W
2.5
62.5
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
http://onsemi.com
12 AMPERES, 60 VOLTS
RDS(on) = 230 mW
PChannel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
44
Drain
12
3
TO220AB
CASE 221A
STYLE 5
MTP2955VG
AYWW
1
Gate
2
Drain
3
Source
MTP2955V = Device Code
A = Location Code
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MTP2955V
MTP2955VG
TO220AB
TO220AB
(PbFree)
50 Units/Rail
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTP2955V/D


  ON Semiconductor Electronic Components Datasheet  

MTP2955VG Datasheet

Power MOSFET

No Preview Available !

MTP2955V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0) (Note 3)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 6.0 Adc)
(Cpk 1.5) (Note 3)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 1(2ISA=dc1,2VAGdSc=, V0GVSd=c,0TVJ d=c1) 50°C)
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
Symbol
Min Typ Max Unit
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
60
58
Vdc
mV/°C
mAdc
− − 10
− − 100
− − 100 nAdc
2.0 2.8 4.0 Vdc
5.0 mV/°C
0.185 0.230
W
Vdc
− − 2.9
− − 2.5
3.0 5.0
mhos
Ciss
Coss
Crss
550 700 pF
200 280
50 100
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
15 30 ns
50 100
24 50
39 80
19 30 nC
4.0
9.0
7.0
VSD
trr
ta
tb
QRR
Vdc
1.8 3.0
1.5
115
ns
90
25
0.53
mC
LD
4.5
nH
LS
7.5
nH
http://onsemi.com
2


Part Number MTP2955VG
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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