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N01L63W3A - Ultra-Low Power Asynchronous CMOS SRAM

Description

Pin Name A0-A15 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground N01L63W3A TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 x

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 3.

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Datasheet Details

Part number N01L63W3A
Manufacturer onsemi
File Size 239.26 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N01L63W3A Datasheet

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Full PDF Text Transcription

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N01L63W3A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L63W3A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L63W3A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
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